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Rev 4: Nov 2004
AO4420, AO4420L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. AO4420L is offered in a lead-free package. AO4420L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 13.7A RDS(ON) < 10.5m (VGS = 10V) RDS(ON) < 12m (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C Current A ID TA=70C B Pulsed Drain Current IDM TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead PD TJ, TSTG
Maximum 30 12 13.7 9.7 60 3.1 2 -55 to 150
Units V V A
W C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 28 54 21
Max 40 75 30
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=12.7A Forward Transconductance VDS=5V, ID=13.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=13.7A TJ=125C 30 0.6 40 8.3 12.5 9.7 37 0.76 10.5 15 12 1 5 3656 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 256 168 0.86 30.5 4.6 8.6 5.5 3.4 49.8 5.9 22.5 12.5 1.1 36 4050 1.1 Min 30 0.004 1 5 100 2 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, ID=13.7A
VGS=10V, VDS=15V, RL=1.1, RGEN=0
IF=13.7A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/s
9 7 75 11 28 16
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID(A) ID(A) 30 20 10 0 0 1 2 3 4 5 VDS(Volts) Figure 1: On-Regions Characteristics VGS =2.0V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VGS =2.5V 30 VGS=5V 25 20 15 10 25C 125C
12 Normalize ON-Resistance 11 RDS(ON)(m) 10 9 8 7 6 0 5 10 15 20 25 30 VGS =10V
1.8 ID=13.7A VGS =4.5V 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=10V
ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30 25 RDS(ON)(m) 20 15 10 5 0 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=13.7A
1E+01 1E+00 1E-01 IS(A) 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C
125C
25C
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS(Volts) 3 2 1 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 5 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics VDS=15V ID=13.7A Capacitance (pF) 10000 Ciss
1000 Coss
100 RDS(ON) limited 10 ID(A) 10ms 1s 1 T J(Max) =150C T A =25C 0.1 0.1 1 10 10s DC
10s 100s Power (W) 100 1ms 0.1s
50 40 30 20 10 0 0.01
0.1
1
10
100
1000
VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD T on Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
Document No.
PD-00139
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
Version
Title
rev C
AO4420 Marking Description
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
Green product
NOTE: LOGO 4420 F&A Y W LT
- AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
PART NO. DESCRIPTION AO4420 AO4420L Standard product Green product
CODE 4420 4420
8
SEATING PLANE
GAUGE PLANE
NOTE 1. ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 4. DIMENSION L IS MEASURED IN GAUGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
1
SYMBOLS DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
RECOMMENDED LAND PATTERN
A A1 A2 b c D E1 e E h L
MIN 1.35 0.10 1.25 0.31 0.17 4.80 3.80 5.80 0.25 0.40 0
NOM 1.65 --- 1.50 --- --- 4.90 3.90 1.27 BSC 6.00 --- --- ---
MAX 1.75 0.25 1.65 0.51 0.25 5.00 4.00 6.20 0.50 1.27 8
MIN 0.053 0.004 0.049 0.012 0.007 0.189 0.150
0.228 0.010 0.016 0
NOM 0.065 --- 0.059 --- --- 0.193 0.154 0.050 BSC 0.236 --- --- ---
MAX 0.069 0.010 0.065 0.020 0.010 0.197 0.157
0.244 0.020 0.050 8
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

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